PART |
Description |
Maker |
NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
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Duracell Renesas Electronics Corporation
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MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
2SC3006 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
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TOSHIBA[Toshiba Semiconductor]
|
2SC2783 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
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TOSHIBA
|
2SC4320 E000939 |
From old datasheet system VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
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MGF7169C 7169CT_N |
From old datasheet system UHF BAND GaAs POWER AMPLIFIER
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
S-AU50L |
UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
|
Toshiba Semiconductor
|
2SK3075 EE08687 |
From old datasheet system N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
|
TOSHIBA[Toshiba Semiconductor]
|
AMFW-7S-122128-100P2 AMFW-7S-117128-65B AMFW-5S-12 |
8000 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 3700 MHz - 4200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 9600 MHz - 9800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 11700 MHz - 12750 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 7200 MHz - 7800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 11400 MHz - 12200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
S-AU57 |
UHF BAND HAM FA RF POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
|
Toshiba Semiconductor
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
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AWT6108 AWT6108M10P8 |
This quad band power amplifier module is designed to support dual, tri and quad band applications. Power Amplifiers Quad Band Power Amplifier Module 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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Anadigics Inc ANADIGICS, Inc.
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